data sheet semiconductor http://www.yeashin.com 1 rev.02 20150105 SB820~sb8100 schottky barrie r re ctif iers voltage 20 to 100 volts current 8 .0 ampere fe a t ures ?e plasti c p a ckage has und e rw riters l aboratory flammability classi fica tion 94v -o u t ili zing flame retarda n t e poxy molding compound. ?e ex ceeds env ironmental standard s o f m i ls- 19500/22 8 ?e l o w pow er loss, high e ffi cien cy . ?e l o w forw rd v o ltge, hi gh curr ent cap ability ?e high surge capa city . ?e for u s e in low v o ltage ,high fre quen cy in v e rters free w heeling , and polarlity pro t ection applica t ion s . ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e ca se : to-2 20ac full molded pla s tic package ?e termina l s: lead solderab le p e r m i l- std-202, me thod 2 08 ?e polari ty : as m a r k ed. ?e m o u n ting po si tio n : a n y ?e w e i ght: 0.08 oun ces, 2.2 4grams. m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s ratings a t 2 5 c am bient tempe r atur e u n less o t herw i se sp ecified. sing le ph ase, h a lf w a v e , 60 h z , re si stiv e or indu cti v e load. for cap a ci tiv e load, dera t e curr ent by 20% p a r a m e t e r s y m b ol SB820 sb830 sb840 sb850 s b 8 6 0 s b 8 8 0 sb8100 uits m a x i mum recurre n t peak rev e rse v o ltage v rrm 2 0 3 0 4 0 5 0 6 0 8 0 1 0 0 v max i mum r m s vo ltage v rms 1 4 2 1 2 8 3 5 4 2 5 6 7 0 v m a x i mum dc blo cking voltage v dc 2 0 3 0 4 0 5 0 6 0 8 0 1 0 0 v m a x i mum a verage for w a rd current .37 5 ??(9 .5mm) lea d l e ngth at tc=100 j i av 8 a peak for w a rd surge curren: 8.3ms s i ngle ha lf sine- w a v e super i mposed on r a ted l o ad(jedec method) i fsm 1 5 0 a m a x i mum for w a rd voltage at 8.0 a v f 0 . 5 5 0 . 7 5 0 . 8 5 v m a xi mum dc rever s e cur r e nt t a =2 5 j at rated dc b l ock i ng vol t age t a =10 0 j i r 0.5 50 ma t y pical therma l r esistanc r c jc 6 c / w oper ati ng juncti o n temperatu r e ra ng t j -55 to +1 50 c stor age tempe r atur e rang t s tg -55 to +150 c to-220 a c unit:inch(mm)
http://www.yeashin.com 2 rev.02 20150105 SB820~SB8200 device characteristics average forward current amperes fig.1- fo r w ard current der a ting cu r ve case temperature, c o 0 150 10 8 6 4 2 0 fig.4- typical ins t an t aneous fo r w ard characteristics fig.2- maximum non - repetitive surge current fig.3- typical reverse characteristics instantaneous reverse current ,ma percent of instantaneous reverse voltage,(%) 10 1.0 0.1 0.01 0.001 20 40 60 80 100 120 140 t =25 c j o t =75 c j o t =100 c j o instantaneous forward current amperes instantaneous forward voltage, volts peak forward surge current amperes no. of cycle at 60hz 150 120 110 90 70 50 30 20 10 1 2 5 10 20 50 100 8.3ms single half since-wave jedec method 100 40 10 8 6 4 2 1.0 .8 .6 .4 .2 .1 .3 .4 .5 .6 .7 .8 .9 1.0 80v~100v 50v~60v 20v~40v
?Z packing ? dimension ? qty picture ?? bag/tube / ? 527mm*33mm*7mm 50 pcs inner box ? 555mm*140mm*55mm 2000 pcs 575mm*285mm *155mm 8000 pcs to/ito220 ? yeashin technology co., ltd. http ?g //www.yeashin.com
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